Physics Of Semiconductor Devices, 3rd Ed

This classic reference provides detailed information on the underlying physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. It integrates nearly 1,000 references to important original research papers and review articles, and includes more than 650 high-quality technical illustrations and 25 tables of material parameters for device analysis.

Table of contents :
Introduction

Part I Semiconductor Physics
· Physics and Properties of Semiconductors-A Review

Part II Device Building Blocks

· p-n Junctions
· Metal-Semiconductor Contacts
· Metal-Insulator-Semiconductor Capacitors

Part III Transistors

· Bipolar Transistors
· MOSFETs
· JFETs, MESFETs, and MODFETs

Part IV Negative-Resistance and Power Devices

· Tunnel Devices
· IMPATT Diodes
· Transferred-Electron and Real-Space-Transfer Devices
· Thyristors and Power Devices


Part V Photonic Devices and Sensors
· LEDs and Lasers
· Photodetectors and Solar Cells
· Sensors

Appendixes

A. List of Symbols
B. International System of Units
C. Unit Prefixes
D. Greek Alphabet
E. Physical Constants
F. Properties of Important Semiconductors
G. Properties of Si and GaAs
H. Properties of SiO, and Si3N
Index


Market Description :
· Design Engineers
· Research Scientists
· Industrial and Electronics Engineering Managers
· Graduate Students


About Author :
Dr. Simon M. Sze received his B. S. degree from the National Taiwan University in 1957, M. S. degree from the University of Washington in 1960, and Ph. D. from Stanford University in 1963, all in Electrical Engineering.
He is UMC Chair Professor, NCTU, and President, National Nano Device Laboratories. Since 1967, he has given lecturers or served as a Visiting Professor to many academic institutions including the University of Cambridge, the University of Delft, Hong Kong University, the University of Peking, Stanford University, and the University of Tokyo.

Dr. Sze has made fundamental contributions to both device physics and technology that have shaped the understanding and advancement of the microelectronic industry. He received the Sun Yat-sen's Award (1969), the IEEE J. J. Ebers Award (1991), the Distinguished National Chair Professor Award (1996-1999, 1999-2002), and the National Science and Technology Prize (1998). He is a Fellow of IEEE (elected in 1977), a member of the Academia Sinica (1994, ROC), and a member of the National Academy of Engineering (1995, USA).

Kwok K. Ng received his Ph.D. degree from Columbia University in 1979 and B.S. degree from Rutgers University in 1975, both in Electrical Engineering. He worked at with Bell Laboratories, Lucent Technologies for nearly 25 years, engaging in different aspects of Si MOS, Si and SiGee bipolar, and compound semiconductor devices and technologies. Dr. Ng has been active in contributing journal papers, conference talks, book chapters, and holds various patents. He is a Publication Committee member of the IEEE Electron Devices Society, a Distinguished Lecturer of the latter, and a former Associate Editor of IEEE Electron Device Letters.