ElectroLane 2sc5570 -20 toshiba NPN Transistor

ElectroLane 2sc5570 -20 toshiba NPN Transistor  (Number of Transistors 2)

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Highlights
  • 2sc5570 npn transistor
Description
What is Transistor 2SC5570 Silicon NPN Triple used for? 2sc5570 transistors are high power NPN transistors because of its high current gain capacity. Its collector current is used in AF amplifiers and high power audio circuits. The Transistor 2SC5570 is a high power transistor with collector current of 23A and collector to emitter voltage of 750V. The transistor is available in 2-21F2A package, commonly used in amplifier designs. Base : It controls the biasing of the transistor, it is used to turn on or off the transistor. Collector : It is connected to load, Current flows inside the collector. Emitter : Normally connected to ground, drains out through the emitter. It is used in Audio frequency amplifier, AF /RF circuits, high current switching (upto 15A) loads, Push-Pull configuration circuits, Low Slew rate devices, Can be used as medium Power switches and HD TV, Projection TV, Digital TV. Why Transistor 2SC5570 Silicon NPN Triple Diffused MESA Type should buy? Buy Transistor 2SC5570 Silicon NPN Triple online in India at – 4industry4.com Horizontal deflection output for HD TV, Projection TV, Digital TV. High Voltage Low Saturation Voltage High Speed : VCBO V : VCE (sat) 3 V (max) 0.1 µs (Typ.) Unit: mm Features of Transistor 2SC5570 Silicon NPN Triple are : 2SC5570 transistor silicon NPN triple diffused MESA type 2SC5570 horizontal deflection output. High power NPN transistors Collector-Base Voltage (Vcb) is 1700V Collector-Emitter Voltage (Vce) is 750V Emitter-Base Voltage (Veb) is 5V Collector Current is 23A Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Specifications of Transistor 2SC5570 Silicon NPN Triple are: Brand : Toshiba Model : 2SC5570 Mfr Package Description : Lead Free, 2-21F2A, 3 Pin Status : Transferred Case Connection : Collector Collector Current-Max (IC) : 28.0 A Collector-emitter Voltage-Max : 800.0 V Configuration : Single DC Current Gain-Min (hFE) : 4.5 JESD-30 Code : R-PSFM-T3 Number of Elements : 1.0 Number of Terminals : 3 Package Body Material : Plastic/Epoxy Package Shape : Rectangular Package Style : Flange Mount Polarity/Channel Type : NPN Qualification Status : Not Qualified Surface Mount : NO Terminal Form : Through-Hole Terminal Position : Single Transistor Application : Switching Transistor Element Material : Silicon Transition Frequency-Nom (fT) : 2.0 MHz Pros and cons of Transistor 2SC5570 Silicon NPN Triple are: Pros: High power NPN transistors For various applications Robust Advance technology High quality material Cons: So far, no such negative issues have been observed
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Specifications
In The Box
Number of Transistors
  • 2
Sales Package
  • 20 peice 2sc5570 transistors
General
Brand
  • ElectroLane
Model Number
  • 2sc5570 -20 toshiba
Type
  • NPN
Package Type
  • pak of 20
Power Consumption
  • 1700 W
Maximum Collector Current
  • 23 A
Maximum Collector Emitter Voltage
  • 800 V
Mount Type
  • through hole
DC Current Gain
  • 4.5
Maximum Operating Frequency
  • 2 MHz
Number of Pins
  • 3
Net Quantity
  • 2 Transistors
Additional Features
Key Features
  • fast high load switching transistor - 2sc5570
Dimensions
Width
  • 15 mm
Length
  • 20 mm
Depth
  • 5 mm
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