सॉलिड स्टेट इलेक्ट्रॉनिक डिवाइस  (इंग्लिश, पेपर बैक)

Solid State Electronic Devices is a primer on semiconductor devices and technology, aimed primarily at undergraduate and postgraduate students from the field of Electrical and Electronics engineering.

Summary Of The Book

Solid State Electronic Devices begins with a chapter on the crystal properties and growth of semiconductors. Subsequent chapters cover concepts such as atoms and electrons, junctions, field-effect transistors, integrated circuits, optoelectronic devices, bipolar junction transistors, and high-frequency and high-power devices.

The book ends with a set of nine appendices and a solution set for some of the questions from the self-quizzes in the chapters. The appendices present information such as properties of semiconductor materials, diffusivities of dopants in Si and SiO2, derivation of Fermi–Dirac statistics, and physical constants and conversion factors.

Each chapter begins with an overview of its objectives and ends with a concise summary of the key concepts it has covered. Key equations are thematically listed and the theoretical concepts are well-supported by relevant examples of practical applications. As many as 200 problems are included for practice.

Like the previous editions of the book, this one i.e. the sixth edition also retains the goal of providing a thorough background on basic semiconductor physics and the latest in semiconductor technology. Certain topics, such as advanced MOS and bipolar processes, are new to this edition.

Over the years, Solid State Electronic Devices has received highly positive reviews. In addition to its usefulness at the university level, the book can also come in handy for practicing scientists and engineers, to help them update their knowledge of modern electronics. This edition was published in 2009 by PHI Learning.

About the Authors

Ben G. Streetman is a former Dean, and a researcher and writer.

He has written more than 290 articles, and a text titled Solid State Electronic Devices.

He has a PhD in Electrical Engineering from the University of Texas at Austin. He continued to be part of the university when he took up a teaching position there. He also established the university’s Microelectronics Research Center. Semiconductor metals and devices are the subjects of his academic focus. Streetman is a member of the National Academy of Engineering as well as the American Academy of Arts and Sciences. He also helped establish what is now known as NAMBE (North American Conference on Molecular Beam Epitaxy).
Sanjay Banerjee is an Indian American engineer and academician.

Sanjay Banerjee is an Indian American engineer and academician.

He has not authored any other books.

He graduated with a B.Tech degree from the Indian Institute of Technology, Kharagpur, India. He then earned a master’s degree and a PhD, both in Electrical Engineering, from the University of Illinois at Urbana-Champaign. His research interests lie in areas of nanostructure device modeling, process modeling, and ultra-shallow junction technology. Banerjee’s work has won him various awards, including the SRC Inventor Recognition Award (2000), the IEEE Millennium Medal (2000), and the Engineering Foundation Advisory Council Halliburton Award (1991). He is now with the University of Texas at Austin, serving as the Director of the Microelectronics Research Center. He is also the Cockrell Family Regents Chair Professor of Electrical and Computer Engineering at the university.