Operation and Modeling of the MOS Transistor, Third Edtion International Edition

Operation and Modeling of the MOS Transistor, Third Edtion International Edition  (English, Paperback, Tsividis Yannis)

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Highlights
  • Language: English
  • Binding: Paperback
  • Publisher: Oxford University Press Inc
  • Genre: Technology & Engineering
  • ISBN: 9780199829835, 9780199829835
  • Edition: 2012
  • Pages: 736
Description
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.
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Specifications
Book Details
Imprint
  • Oxford University Press Inc
Publication Year
  • 2012
Dimensions
Width
  • 28 mm
Height
  • 193 mm
Length
  • 235 mm
Weight
  • 1161 gr
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