Semiconductor MOSFET for Electronics Projects. Pack of 3 PcS. Type Designator: IRF540N, Type of Transistor: MOSFET, Type of Control Channel: N -Channel, Maximum Power Dissipation (Pd): 140 W, Maximum Drain-Source Voltage |Vds|: 100 V, Maximum Gate-Source Voltage |Vgs|: 10 V, Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V, Maximum Drain Current |Id|: 33 A, Maximum Junction Temperature (Tj): 150 °C, Total Gate Charge (Qg): 47.3 nC, Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm, Package: TO220AB. Rest of the details are in the component datasheet.