Other Features | - VDDQ: 1.5 V, 8 Independent Internal Bank, Programmable Additive Latency: 0, CL - 2 or CL - 1 Clock, Programmable CAS Write Latency (CWL): 7 (DDR3-1333), 8-bit Pre-fetch, Bi-directional Differential Data Strobe, Internal Self Calibration Through ZQ-pin (RZQ: 240 ohm 1%), On Die Termination using ODT-pin, Average Refresh Period 7.8us at Lower than TCASE 85 DegC, 3.9us at 85 DegC < TCASE < 95 DegC, 240-pin DIMM uses Gold Contact Fingers, Asynchronous Reset, PCB: Height 30.00 mm, Double Sided Component, CL (IDD): 9 Cycles, Row Cycle Time (tRCmin): 49.5ns (min), Refresh to Active/Refresh Command Time (tRFCmin): 160ns (min), Row Active Time (tRASmin): 36ns (min), Power (Operating): 2.400 W, UL Rating: 94 V - 0, Operating Temperature: 0 DegC to 85 DegC, Storage Temperature: -55 DegC to 100 DegC, Supports Intel XMP (Extreme Memory Profiles)
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