Other Features | - Bi-directional Differential Data Strobe, Internal self calibration through ZQ pin (RZQ: 240 ohm 1 %), On Die Termination using ODT pin, Average Refresh Period 7.8us at lower than TCASE 85DegC, 3.9us at 85DegC < TCASE < 95DegC, Gold Lead plating, 8 Independent Internal Bank, Programmable Additive Latency: 0, CL - 2, CL - 1 clock, Programmable CAS Write Latency (CWL) - 7 (DDR3-1333), 8-bit Pre-Fetch, Asynchronous Reset, PCB: Height 0.740 inch, Double sided component, CL (IDD) - 9 cycles, Row Cycle Time (tRCmin) - 49.5ns (min), Refresh to Active / Refresh 160ns (min), Command Time (tRFCmin), Row Active Time (tRASmin) - 36ns (min), Power (Operating) - 1.410 W, UL Rating 94 V - 0, Operating Temperature 0DegC to 85DegC, Storage Temperature -55DegC to
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