Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
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Specifications
Book Details
Title
Low Power and Reliable SRAM Memory Cell and Array Design
Imprint
Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Product Form
Paperback
Publisher
Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Genre
Technology & Engineering
Source Type
T
ISBN13
9783642270185
Book Category
Higher Education and Professional Books
BISAC Subject Heading
TEC021020
Book Subcategory
Electronics and Communications Engineering Books
ISBN10
9783642270185
Language
English
Dimensions
Height
235 mm
Length
155 mm
Weight
250 gr
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