- Storage Memory: Samsung V-NAND 2-bit MLC, Controller: Samsung Phoenix Controller, TRIM Support, SMART Support, Garbage Collection, Device Sleep Mode Support, Encryption Support: AES 256 Bit, Sequential Read: Upto 3500 Mbps, Sequential Write: Upto 2700 Mbps, Random Read (4 KB, QD32): Upto 500000 IOPS, Random Write (4 KB, QD32): Upto 500000 IOPS, Random Read (4 KB, QD1): Upto 15000 IOPS, Random Write (4 KB, QD1): Upto 55000 IOPS, Average Power Consumption (System Level): Average: 5.7 W, Maximum: 8.5 W, Power consumption (Idle): Maximum: 30 mW, Reliability (MTBF): 1.5 Million Hours Reliability (MTBF), Shock: 1500 G and 0.5 ms (Half Sine)
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